問題詳情

4. What is the depletion-layer width for a p-n junction with zero bias in germanium, given that theimpurity concentrations are

, respectively, at T = 300 K, relativepermittivity εr = 16 and contact potential difference Vo = 0.8 V?
(A) 0.0725 μm
(B) 0.145  μm
(C) 0.29 μm
(D) 0.58  μm
(E) 1.16  μm

參考答案

答案：[無官方正解]
難度：計算中-1
書單：沒有書單，新增