問題詳情

六、Si 的 SiO2 熱成長可用 Deal-Grove 模型來描述:tox2 + A tox = Bt,公式中 tox 為氧化層厚度、t 為氧化時間、A 與 B 為相關之參數。以 1000˚C 做乾氧成長時,A = 0.165 μm、B = 0.0117 μm2/hr。成長 10 小時,問 SiO2 的厚度。若 tox>>A,證明 SiO2 的成長速率與 tox 成反比,並說明其物理意義。(15 分)

參考答案

答案:B
難度:簡單0.816564
統計:A(40),B(1193),C(167),D(27),E(0)

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