問題詳情

4. Consider the impurity diffusion of phosphorus into a silicon wafer. If phosphorus isdiffused into a thick silicon waler with no previous phosphorus in it at a temperatureof 1100℃. If the surface concentrtration of the phosphorus is 1 x

atoms/cm3andits eoncentration at ce of 1.2 Jum below the surface is

atoms/cm3, howlong must be required for the impurity diffusion? The difiusion coeficient forphosphorus diffusing in silicon at 1 100*C is 3.0 x

. (10%)

 

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