問題詳情

4. (18%) A metal-semiconductor contact is formed on Si (electron affinity X = 4.05 eV) with aluminum (work functionΦm = 4.1 eV). The doping concentration of Si is


【題組】

(a) (6%) Please plot the ideal band diagram of the Al-5i M-S junction and mark the Fermi level EF, the Schottky barrierheight

, and built-in potential barrier

at equilibrium.

參考答案