問題詳情

5. (20%) For a conventional planar n-MOSFET, source/drain regions are heavily doped with a concentration of ND=

and the channel has a doping level of

. The oxide is 1-nm HfO2with a dielectric constant of32 and the gate is aluminum (work function Φm = 4.1 eV). Trapped charges are inside the oxide and adjacent to theoxide/semiconductor interface with a density of

The gate length is 1 μm. The dielectric constant ofSi is 11.7.

F/cm


【題組】

(a) (5%) What is the Flat-Band voltage

of this MOSFET without considering trapped charge effects (i.e. Qss = 0)?

參考答案